Variation of generation-recombination noise density with 300 K background flux in epitaxial LWIR Hg1-xCdxTe photoconductors having three-layer light absorbing configuration

Galina V. Chekanova; Albina A. Drugova; Alexander V. Kurbatov; Mikhail S. Nikitin

doi:10.1117/12.609588

23 May 2005 Variation of generation-recombination noise density with 300 K background flux in epitaxial LWIR Hg_1-xCd_xTe photoconductors having three-layer light absorbing configuration

Galina V. Chekanova, Albina A. Drugova, Alexander V. Kurbatov, Mikhail S. Nikitin

Author Affiliations +

Proceedings Volume 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III; (2005) https://doi.org/10.1117/12.609588
Event: SPIE Third International Symposium on Fluctuations and Noise, 2005, Austin, Texas, United States

Abstract

Spectral density of "generation-recombination" noise voltage <δV²gr> ("g-r noise") in photoconductive Hg_1-xCd_xTe infrared radiation detectors with absorber n-Hg_1-xCd_xTe layer was calculated. Variations of <δV²gr> with doping level (n ≈ N_d), ambient background flux density (Q_bgr, T_bgr ≈ 300 K), electrical bias (V_b/I_b) and pixel active area were analyzed. Spectral density of low-frequency noise as superposition of Flicker-noise "1/f", g-r noise resulting from fluctuations in generation-recombination rates of equilibrium (thermal) charge carriers <δV²_gr,th> and excess charge carriers exited by background photons <δV²_gr,bgr> and Johnson-Nyquist noise <δV²_JN> were examined in small active area (30 μm x 30 μm and 50 μm x 50 μm) Hg_1-xCd_xTe photoconductors based on MBE-grown multi-layer structures. Noise measurements were performed on Long-Wave (LWIR) PC MCT detectors with responsivity peak wavelength 10 ≤ λ_p ≤ 12 μm at operating temperature T_op ≈ 78 K. Measured dependencies of g-r noise voltage spectral density have confirmed BLIP mode of photoconductors up to FOV=10 degrees where D*(λ_p) exceed 2x10¹¹ Jones.

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Galina V. Chekanova, Albina A. Drugova, Alexander V. Kurbatov, and Mikhail S. Nikitin "Variation of generation-recombination noise density with 300 K background flux in epitaxial LWIR Hg_1-xCd_xTe photoconductors having three-layer light absorbing configuration", Proc. SPIE 5846, Noise and Information in Nanoelectronics, Sensors, and Standards III, (23 May 2005); https://doi.org/10.1117/12.609588

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KEYWORDS

Photoresistors

Cadmium

Tellurium

Mercury

Long wavelength infrared

Sensors

Lanthanum

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