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8 June 2005 Heterogenous chain mechanism of lead azide initiation by a laser pulse in the transparence region of a crystal
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Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.633897
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation
Abstract
The heterogenous-chain mechanism of low-threshold initiation of heavy azides metal (HMA) is suggested. The recombination of azides-radicals on a HMA surface leads to generation of electron-hole pairs. Azide radicals are formed at trapping of holes surface levels of azid anions. The computer simulation of this mechanism is carried out. The computing were performed at different length and densities of energy of a laser pulse. The initiation delay depends on the characteristic time within which traps are filled by holes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. V. Khaneft "Heterogenous chain mechanism of lead azide initiation by a laser pulse in the transparence region of a crystal", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.633897
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