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8 June 2005 Photoluminescence kinetics of type II GaAs/AlAs superlattices under the influence of an electric field
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Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.634383
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation
Abstract
We have experimentally studied the low-temperature photoluminescence (PL) kinetics in type II GaAs/AlAs superlattices under the influence of an electric field. We have found that the application of electric field leads to an increase in the PL intensity of free exciton line and e-hh PL line, while the PL intensity of lines of localized excitons and phonon replicas do not increase. Then the acceleration of PL kinetics of the no-phonon and phonon-assisted excitonic lines starts after some decay with respect to the appearance of the SAW electric field at the photogeneration point. We conclude that (1) the origin for the rise of the PL intensity of free exciton and e-hh lines is carriers ejected from the localized states by the electric field; (2) the PL intensity of localized excitonic line is not increases because the lateral electric field prevents localization; (3) the acceleration of PL kinetics of no-phonon and phonon-assisted lines is due to an increase of the XZ-exciton recombination probability that results from impact with the electrons transferred to the Xxy levels by electric field.
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D. V. Gulyaev, A. K. Bakarov, A. V. Tsarev, and K. S. Zhuravlev "Photoluminescence kinetics of type II GaAs/AlAs superlattices under the influence of an electric field", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); https://doi.org/10.1117/12.634383
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