8 June 2005 Solid phase growth and properties of Mg2Si epitaxial films on Si(111)
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Proceedings Volume 5851, Fundamental Problems of Optoelectronics and Microelectronics II; (2005) https://doi.org/10.1117/12.634544
Event: Fundamental Problems of Optoelectronics and Microelectronics II, 2004, Khabrovsk, Russian Federation
Abstract
A technology of solid-phase growth of Mg2Si thin films from Mg and Si layers on a pre-fabricated template layer of Mg2Si islands on Si (111) has been developed. The optimum temperature (T=550° C) for growth of epitaxial Mg2Si films on Si (111) has been found. It has been shown from optical spectroscopy data that Mg2Si epitaxial film has a direct fundamental transition with the energy of 0.75-0.76 eV with small combined density of states. It represents transition of small number of valence electrons into Mg-Si bonding states in the conductance band. The strong absorption range (1.9-6.2 eV) corresponds to transitions from bonding to anti-bonding states.
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N. G. Galkin, N. G. Galkin, S. V. Vavanova, S. V. Vavanova, K. N. Galkin, K. N. Galkin, A. M. Maslov, A. M. Maslov, } "Solid phase growth and properties of Mg2Si epitaxial films on Si(111)", Proc. SPIE 5851, Fundamental Problems of Optoelectronics and Microelectronics II, (8 June 2005); doi: 10.1117/12.634544; https://doi.org/10.1117/12.634544
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