12 April 2005 High-speed imaging for evaluation of silicon wafer defects
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Proceedings Volume 5852, Third International Conference on Experimental Mechanics and Third Conference of the Asian Committee on Experimental Mechanics; (2005) https://doi.org/10.1117/12.621673
Event: Third International Conference on Experimental Mechanics and Third Conference of the Asian Committee on Experimental Mechanics, 2004, -, Singapore
Abstract
A speckle shearing interferometric system is proposed for real-time inspecting sub-surface defects of unpolished silicon wafer. Under dynamic thermal loading, derivative distribution of out-of-plane displacement along a shear direction is measured and homogeneity and regularity of the distribution is indicator of whether impurities or voids exist under the wafer surface. During a continuous thermal stressing, a sequence of speckle patterns are obtained and phase analysis is implemented in time domain. In this paper, the validity of the method for non-destructive testing of sub-surface defects of silicon wafers has been demonstrated.
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Jun Wang, Ganesha Udupa, Bryan Kok Ann Ngoi, "High-speed imaging for evaluation of silicon wafer defects", Proc. SPIE 5852, Third International Conference on Experimental Mechanics and Third Conference of the Asian Committee on Experimental Mechanics, (12 April 2005); doi: 10.1117/12.621673; https://doi.org/10.1117/12.621673
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