28 June 2005 A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617065
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
In this paper, an Energy Intensity Distribution (EID) model considering dose latitude for Variable Shaped Beam (VSB) has been developed. η values (i.e. back-scattering ratio) versus dose and process threshold have been investigated by using the EID model. Additionally, a new procedure to find optimum PEC values (η) taking into account of the process threshold is proposed through simulation. For fogging effect correction, we have adopted a Gauss model and created a new simulation algorithm to find the most suitable parameters regarding η value, process threshold, dose and the EID model.
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Eui-Sang Park, Hyun-Joon Cho, Jin-Min Kim, Sang-Soo Choi, "A new method for correcting proximity and fogging effects by using the EID model of variable shaped beam for 65-nm node", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617065; https://doi.org/10.1117/12.617065
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