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28 June 2005 A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low k1 lithography
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617122
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
Progressive mask defect problems such as crystal growth or haze are key yield limiters for DUV lithography, especially in 300mm fabs. Even if the incoming mask quality is good, there is no guarantee that the mask will remain clean during its production usage in the wafer fab. These progressive defects must be caught in advance during production in the fabs. The ideal reticle quality control goal should be to detect any nascent progressive defects before they become yield limiting. So, a high-resolution mask inspection is absolutely needed, but the big question is: “how often do fabs need to re-inspect their masks”? This re-inspection frequency should ideally be the most cost-effective frequency at which there is minimum threat for a yield loss. Previous work towards finding a cost effective mask re-qualification frequency was done prior to the above mentioned progressive defect problem that industry started to see at a much higher rate during just the last few years. Other related recent work was done 2004 BACUS conference which is dedicated to DRAM fab data. In this paper a realistic mask re-qualification frequency model has been developed based on a large volume of data from an advanced logic fab. This work will compliment previous work in this area done with the data from a DRAM fab. Statistical methods are used to analyze mask inspection and product data, which are combined in a stochastic model.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaustuve Bhattacharyya, Mark Eickhoff, Mark Ma D.D.S., and Sylvia Pas "A reticle quality management strategy in wafer fabs addressing progressive mask defect growth problem at low k1 lithography", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617122
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