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28 June 2005 Advanced photomask repair technology for 65nm lithography (3)
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617344
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
The 65nm photomasks have to meet tight specifications and improve the production yield due to high production cost. The 65nm optical lithography was thought to have two candidates, 157nm and 193nm. However, at the advent of immersion lithography, it is certain that 193nm lithography will be adopted. Therefore, we decided to develop the FIB machine, SIR7000FIB, proior to the EB machine. We optimized repair conditions of FIB system, SIR7000FIB, and evaluated this system. First, we demonstrated minute defect repair using about 15nm defect mask. Then, we confirmed that the repeatability of repair accuracy was below 7nm on a MoSi HT mask patterned 360nm and 260nm L&S patterns with opaque and clear defects by AFM. Consequently, we have achieved the target specifications of this system.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasutoshi Itou, Yoshiyuki Tanaka, Yasuhiko Sugiyama, Ryoji Hagiwara, Haruo Takahashi, Osamu Takaoka, Tomokazu Kozakai, Osamu Matsuda, Katsumi Suzuki, Mamoru Okabe, Syuichi Kikuchi, Atsushi Uemoto, Anto Yasaka, Tatsuya Adachi, and Naoki Nishida "Advanced photomask repair technology for 65nm lithography (3)", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617344
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