28 June 2005 Character-build standard-cell layout technique for high-throughput character-projection EB lithography
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617427
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
EB direct writing technology for small-volume fabrication LSIs is cost-effective compared to optical lithography. The new standard cell layout technique called “Character-Build cell” is developed in order to increase the utilization ratio of character projection (CP) mask. The various kinds of standard cells can be composed by the combination of "character” cells. The 86% of 223 standard cells can be composed by 17 “character” cell using this technique. It is estimated that the great portion of random logic area can be exposed by about 50 CP mask. Therefore the throughput of EB direct write using this layout technique will be greatly higher than that of the conventional layout.
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Takeshi Fujino, Yoshihiko Kajiya, Masaya Yoshikawa, "Character-build standard-cell layout technique for high-throughput character-projection EB lithography", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617427; https://doi.org/10.1117/12.617427
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