28 June 2005 Correction of long-range effects applied to the 65-nm node
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617433
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
Specifications for CD control on current technology nodes have become very tight, especially for the gate level. Therefore all systematic errors during the patterning process should be corrected. For a long time, CD variations induced by any change in the local periodicity have been successfully addressed through model or/and rule based corrections. However, if long-range effects (stray light, etch, and mask writing process...) are often monitored, they are seldom taken into account in OPC flows. For the purpose of our study, a test mask has been designed to measure these latter effects separating the contributions of three different process steps (mask writing, exposure and etch). The resulting induced CD errors for several patterns are compared to the allowed error budget. Then, a methodology, usable in standard OPC flows, is proposed to calculate the required correction for any feature in any layout. The accuracy of the method will be demonstrated through experimental results.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jerome Belledent, Jerome Belledent, James Word, James Word, Yorick Trouiller, Yorick Trouiller, Christophe Couderc, Christophe Couderc, Corinne Miramond, Corinne Miramond, Olivier Toublan, Olivier Toublan, Jean-Damien Chapon, Jean-Damien Chapon, Stanislas Baron, Stanislas Baron, Amandine Borjon, Amandine Borjon, Franck Foussadier, Franck Foussadier, Christian Gardin, Christian Gardin, Kevin Lucas, Kevin Lucas, Kyle Patterson, Kyle Patterson, Yves Rody, Yves Rody, Frank Sundermann, Frank Sundermann, Jean-Christophe Urbani, Jean-Christophe Urbani, } "Correction of long-range effects applied to the 65-nm node", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617433; https://doi.org/10.1117/12.617433
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