28 June 2005 Defect inspection strategy of LEEPL masks
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617292
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
The process of inspection and repair for LEEPL masks is increasingly required. A stencil mask inspection system EBScanner (Tokyo Seimitsu), using transmission electron beam, was investigated defect inspection capability on LEEPL masks. We fabricated a defect standard mask (DSM) in which programmed defects were formed, to estimate the performance of the inspection system. We performed experiments on printability of the DSM and Area MEEF (Mask Error Enhancement Factor) of LEEPL. As a result, correlation between area of pattern on mask and that on wafer is excellent, and Area MEEF is 1.19. The killer defect was defined based on the printing result on wafer. The defect size is measured by pattern shape analysis tool MaskEXPRESS (Toppan Printing). We checked the detection rate of killer defects and the number of false or real defects other than programmed defects by optimizing sensitivity of EBScanner. In case that a lot of false defect and very small defect (not crucial) are detected due to the non-uniformity of the pattern size, it takes too much time for defect review and practical classification. For reducing this work, we studied some solutions. And thus, we will discuss the analysis of EBScanner’s inspection image, including the defect classification.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Isao Yonekura, Shinji Kunitani, Takashi Susa, Kojiro Itoh, Akira Tamura, and Satoru Maruyama "Defect inspection strategy of LEEPL masks", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617292; https://doi.org/10.1117/12.617292

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