Defect quality management of 248nm alt-PSM in low-k1 condition

Yoshikazu Nagamura; Satoshi Momose; Akira Imai; Kunihiro Hosono; Yasutaka Morikawa; Kouichirou Kojima; Hiroshi Mohri

doi:10.1117/12.617337

28 June 2005 Defect quality management of 248nm alt-PSM in low-k1 condition

Yoshikazu Nagamura, Satoshi Momose, Akira Imai, Kunihiro Hosono, Yasutaka Morikawa, Kouichirou Kojima, Hiroshi Mohri

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617337
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

Application of long wavelength in lithography process has a great benefit for cost of ownerships (COO) of semiconductor manufacturers, however there’s a trade off of reducing process margins due to the low k1 condition, and all the efforts in order to obtain large process windows on wafer connect directly to chip production management. In this paper, the authors used 248 nm wavelength lithography with alternating phase shift mask (alt-PSM) to develop 90 nm line and space patterns in 90 nm half pitch on wafer, and thoroughly investigated printability of defects and defect-repairs on alt-PSM. Sensitivity analysis of photomask defect inspection tools was implemented and it showed that existing inspection tools satisfied requirements for detection of chrome (Cr) and quartz (Qz) defects, which had impacts on wafer. Printability of Cr and Qz defect repairs was evaluated focusing on through-defocus behavior, and conditions of defect repair were optimized to reduce variation of critical dimension (CD) on wafer. The repair conditions were also optimized by estimation of overlaps of process windows of defect-repaired area on that of non-defective references. Process windows were analyzed based on both wafer and aerial image measurements. In the last section of this paper, we discussed managing process windows of defect repairs by controls of biases and Qz heights as parameters on defect-repaired areas and suggested that total topography control around defective area was required in addition to the prospected parameters in order to maximize process margins.

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Yoshikazu Nagamura, Satoshi Momose, Akira Imai, Kunihiro Hosono, Yasutaka Morikawa, Kouichirou Kojima, and Hiroshi Mohri "Defect quality management of 248nm alt-PSM in low-k1 condition", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617337

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KEYWORDS

Chromium

Semiconducting wafers

Critical dimension metrology

Photomasks

Inspection

Defect inspection

Lithography

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