Paper
28 June 2005 Development of positive-tone chemically amplified resist for LEEPL mask making
Yoshiyuki Negishi, Kazumasa Takeshi, Takashi Yoshii, Keishi Tanaka, Yasuhiro Okumoto
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Abstract
We have developed PCARs for LEEPL mask making that has high resolution, good CD uniformity and process stability. The proper choice of resists and the process optimization enabled to form 60nm hole patterns and achieved the local CDU<4.0nm at 80nm hole patterns using the current 50 keV VSB exposure system. The results of the examination about PEB temperature and CD revealed that the CD of small hole patterns was controlled by the quencher diffusion rather than the generated acid diffusion. Defocus issue was also investigated and the sensitivity control of a resist was effectively method against CD error. These results in this report clearly indicate the strategy of the resist development for resolve less than 100nm feature size using EB exposure system.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshiyuki Negishi, Kazumasa Takeshi, Takashi Yoshii, Keishi Tanaka, and Yasuhiro Okumoto "Development of positive-tone chemically amplified resist for LEEPL mask making", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617283
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KEYWORDS
Charged-particle lithography

Mask making

Photomasks

Vestigial sideband modulation

Chemically amplified resists

Diffusion

Critical dimension metrology

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