28 June 2005 Evaluation of e-beam sensitive CARs for advanced mask making
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617111
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
An increasingly tighter set of mask specifications requires new equipment, process improvements, and improved e-beam resist materials. Resist profiles, footing behavior and line edge roughness (LER) have strong impacts on CD-uniformity, process bias and defect control. Additionally, the CD stability of e-beam resists in vacuum contributes to the final CD-uniformity as a systematic error. The resolution capability of the resist process is becoming increasingly important for slot contact like features, which are expected to be applied as clear assist features in contact hole layers at the sub 100nm technology node (1x)1. Three e-beam sensitive pCAR resists from different vendors were investigated in terms of resolution and pattern quality, PED stability, PEB sensitivity, dose latitude, CD-uniformity and line edge roughness. As reported here, all three pCARs showed improvements in all of these areas. Future work with these pCAR resists will focus on defect density, PCD, and CD uniformity.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Axel Feicke, Axel Feicke, Mathias Irmscher, Mathias Irmscher, Anatol Schwersenz, Anatol Schwersenz, Martin Tschinkl, Martin Tschinkl, } "Evaluation of e-beam sensitive CARs for advanced mask making", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617111; https://doi.org/10.1117/12.617111

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