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28 June 2005 Evaluation of quartz dry etching profile for the PSM lithography performance
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005)
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
The phase shift mask (PSM) is one of the most effective approaches to improve ArF lithography performance. Recently, the quartz dry etching technology plays an important role to fabricate the PSM, such as space bias type Alternating (Alt.) PSM and chrome-less phase lithography (CPL) mask. The quartz etching profiles seems to be affected the lithography performance. In this paper, preliminary, we evaluate the nominal influences of quartz profile by rigorous electromagnetic field simulation. Then influence of the quartz profile is investigated by measuring the real masks. In this experiment, we intentionally fabricate Alt. PSM and CPL masks with the tapered side-wall and deeper micro-trench. Lithography performances of the real masks are measured by the aerial image measurement system (AIMS fab193). We compare the result of AIMS with simulation. We investigate the AIMS measurement well corresponds to the simulation. Side-wall angle and corner rounding strongly affect the lithography performance. However, micro-trench doesn’t affect a lot.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toru Komizo, Satoru Nemoto, Yosuke Kojima, Takashi Ohshima, Takashi Yoshii, Toshio Konishi, Kazuaki Chiba, Yasutaka Kikuchi, Masao Otaki, and Yoshimitsu Okuda "Evaluation of quartz dry etching profile for the PSM lithography performance", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005);

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