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28 June 2005 Experimental analysis of image placement accuracy of single-membrane masks for LEEPL
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617290
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
We have fabricated seven masks with different patterns on a 27 mm x 34 mm single-membrane for Low Energy Electron-beam Proximity Lithography (LEEPL) by the wafer-flow process. We have examined the membrane flatness and image placement (IP) accuracy, which are essential qualities to be assured. We summarize the results as follows: Masks with membranes of 13 MP and 20MPa stress satisfy the membrane flatness requirement of less than 2 μm while a mask with a 6 MPa membrane does not. Maps of the distortion induced by the wafer-flow process are obtained for the masks with 13 MPa and 20 MPa membranes and their performance is explained in terms of the contraction of the mask substrate. The out-of-plane distortion for a 3 mm x 3 mm block of dense hole patterns with an opening ratio, ranging from 10% to 40%, has been evaluated. The distortion induced by the block has been evaluated and the effect of the local magnification correction on the IP error is examined. Maps of the distortion induced by the wafer-flow process and 4 x 4 blocks of 10% and 20% opening are obtained for a mask with 13 MPa membrane and the distortion induced by the blocks is estimated in 3σ. The uncorrectable IP error for the mask with the blocks of 10% opening is estimated to be 10 nm (in 3σ), which satisfies the specification for LEEPL masks.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Kitada, Yuuki Aritsuka, Satoshi Yusa, Naoko Kuwahara, Hiroshi Fujita, Tadahiko Takikawa, Hisatake Sano, and Morihisa Hoga "Experimental analysis of image placement accuracy of single-membrane masks for LEEPL", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617290
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