Paper
28 June 2005 Exploring the fundamental limit of CD control: shot noise and CD uniformity improvement through resist thickness
Ming L. Yu, Allan Sagle, Benny Buller
Author Affiliations +
Abstract
We have observed that increasing the thickness of the resist can improve the critical dimension uniformity (CDU) in electron beam lithography. This is our first experimental demonstration that increasing the acid generation in the resist by incident electrons is a pathway to reduce the effect of shot noise on CDU. The measurements were made with our Quadra raster shaped beam lithography system. The resist was REAP 200, a chemically amplified resist. The thicknesses were 200, 300 and 600 nm. The phenomenon is consistent with our model prediction that there would be a reduction of the shot-noise-induced CDU as the number of acid molecules generated in the chemically amplified resist increased with the resist thickness. We used the model to estimate the acid generation efficiency and the resist blur. We have also observed deviations from this trend in the thick resist (600 nm) suggesting complexity that may not be explained by the model. We are continuing our investigation to confirm these preliminary results.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ming L. Yu, Allan Sagle, and Benny Buller "Exploring the fundamental limit of CD control: shot noise and CD uniformity improvement through resist thickness", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617058
Lens.org Logo
CITATIONS
Cited by 5 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Data modeling

Molecules

Critical dimension metrology

Lithography

Beam shaping

Chemically amplified resists

Scattering

Back to Top