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28 June 2005 Lithography process related OPC development and verification demonstration on a sub-90nm poly layer
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617194
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
Using a commercialized product Calibre OPC platform, optical and process models were built that accurately predict wafer-level phenomena for a sub-90nm poly process. The model fidelity relative to nominal wafer data demonstrates excellent result, with EPE errors in the range of ±2nm for pitch features and ±7 for line-end features. Furthermore, these models accurately predict defocus and off-dose wafer data. Overlaying SEM images with model-predicted print images for critical structures shows that the models are stable and accurate, even in areas especially prone to pinching or bridging. In addition, process window ORC is shown to identify potential failure points within some representative designs, allowing the mask preparation shop to easily identify these areas within the fractured data. And finally, the data and images of mask hotspots will be shown and compared down to wafer level.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Yuan Hung, Qingwei Liu, Liguo Zhang, Shumay Shang, and Andrew Jost "Lithography process related OPC development and verification demonstration on a sub-90nm poly layer", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617194
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