New EUVL ML capping design for ML blank multiple reuses

Pei-yang Yan; Eberhard Spiller

doi:10.1117/12.617483

28 June 2005 New EUVL ML capping design for ML blank multiple reuses

Pei-yang Yan, Eberhard Spiller

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617483
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

One of the biggest challenges in extreme ultraviolet lithography (EUVL) reflective mask blank fabrication is to make a reflective multilayer (ML) blank “defect-free.” SEMI-P38 standard for EUVL mask absorbing film stacks and ML requires ML defect density in the mask quality area to be less than 0.003 defect/cm² at 30nm size for the 32 nm technology node. Due to the technical challenge in making such a defect-free ML EUVL mask blank, the EUVL ML blank yield is expected to be low. In order to reduce EUVL technology cost, it is desirable to reuse a qualified defect-free ML blank a few times. In this paper we will present a new EUVL ML blank design that allows one to reuse the ML blank after a patterned mask is no longer needed. A standard ML design will only allow one time use. The blank, in general, will not be reusable or reclaimable due to the top capping layer (possible a few layers underneath it) damage during the mask patterning, cleaning, and usage. The new ML blank design alters the standard capping layer structures such that the ML blanks can be reused up to a few times after the blank goes through each complete mask patterning and usage cycle. No additional ML re-deposition is needed for reusing the ML blanks. This new ML structure is particularly attractive since a blank, once it is qualified as a defect-free blank, can be reused a few times as a defect-free ML blank.

Citation Download Citation

Pei-yang Yan and Eberhard Spiller "New EUVL ML capping design for ML blank multiple reuses", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617483

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KEYWORDS

Ruthenium

Reflectivity

Extreme ultraviolet lithography

Etching

Photomasks

Neodymium

Silicon

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