28 June 2005 Prediction of etch profile and CD variation due to dry etch using TRAVIT software tool
Author Affiliations +
Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617070
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
Predicting variations of critical dimensions (CDs) during a dry etching process is highly desirable in order to reduce cost and shorten fabrication time. Microloading and macroloading effects contribute to CD variation. Variation of pattern density and plasma distribution over the photomask are the main reasons for variation of etch rates. Pattern dependent error is the most important. TRAVIT is a dry etch simulation tool that has been developed to simulate etch profiles, etched linewidths, and CD variations resulting from dry etching. The software takes a GDSII pattern and determines if the CD variation is within the prescribed tolerance or if the pattern needs additional correction, and to what degree. In this way, an expensive writing of a high end mask, its dry etch, and metrology can be replaced by a simulation to avoid actual fabrication of a mask. Examples of simulations including variable ICP power, physical and chemical etch components, and optimization of a sidewall, bias, and CD variation are presented.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Babin, S. Babin, K. Bay, K. Bay, S. Okulovsky, S. Okulovsky, } "Prediction of etch profile and CD variation due to dry etch using TRAVIT software tool", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617070; https://doi.org/10.1117/12.617070
PROCEEDINGS
8 PAGES


SHARE
RELATED CONTENT

Dry etch challenges for CD shrinkage in memory process
Proceedings of SPIE (March 16 2015)
Study of loading effect on dry etching process
Proceedings of SPIE (August 27 2003)
Mask-making study for the 65-nm node
Proceedings of SPIE (December 16 2003)
Software to simulate dry etch in photomask fabrication
Proceedings of SPIE (December 05 2004)
Cr and MoSi photomask plasma etching
Proceedings of SPIE (June 01 2003)

Back to Top