28 June 2005 Process model quality assessment by sensitivity analysis
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617197
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
An accurate process model is the linchpin of model-based Optical Proximity Correction (OPC) and Resolution Enhancement Technique (RET) synthesis. The accuracy of the resulting mask layout can be no better than that of the model. Relatively good, first-principle mathematical models exist for some process steps, such as aerial image formation, but resulting silicon is a combination of many effects, including those less well understood. Accuracy can be assured only with models anchored to observed phenomena. Process models are usually a combination of first principle elements and phenomenological components with the “right” degrees to freedom to fit the overall process. The key challenge in generating accurate models is to capture all process behavior over all conditions with a minimum number of empirical measurements. This means that models must extrapolate accurately from the specifics measured, and should be largely immune to empirical measurement noise. In this paper we describe a methodology in which to test model performance with respect to these criteria.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qiliang Yan, Lawrence S. Melvin, James P. Shiely, "Process model quality assessment by sensitivity analysis", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617197; https://doi.org/10.1117/12.617197
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