28 June 2005 Reducing alternating phase shift mask (Alt-PSM) write-time through mask data optimization
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617136
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
Resolution enhancement techniques (RETs) such as optical proximity correction (OPC), phase-shifting masks (PSM), sub-resolution assist features (SRAF) have become essential components in the sub-90nm silicon manufacturing process. For the 65nm generation, alternating phase shift masks (Alt-PSM) is recognized as a proven wafer imaging technique. The large process window and hence stable process control is one of the key properties which make it the most viable approach for 65nm production compared with other RET approaches. On the mask making side, the good mask error enhancement factor (MEEF) performance of the Alt-PSM is a big plus as it makes the wafer CD control less susceptible for CD errors on the mask. Even though the benefits of Alt-PSM are well known, the reticle cost and manufacturing challenges have impeded its extensive adoption. In this work, we explore a methodology to reduce the Alt-PSM mask write time vis-a-vis cost, through certain data optimization techniques.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bryan S. Kasprowicz, Paul J. M. van Adrichem, Manoj Chacko, "Reducing alternating phase shift mask (Alt-PSM) write-time through mask data optimization", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617136; https://doi.org/10.1117/12.617136
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