Simulation based OPC for contact pattern using 193 nm lithography

Martin Keck; Christof Bodendorf; Jorg Thiele; Alberto Lopez Gomez; Ying-Chung Tseng; Teng-Yen Huang

doi:10.1117/12.617215

28 June 2005 Simulation based OPC for contact pattern using 193 nm lithography

Martin Keck, Christof Bodendorf, Jorg Thiele, Alberto Lopez Gomez, Ying-Chung Tseng, Teng-Yen Huang

Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617215
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan

Abstract

For state of the art technologies, rule based optical proximity correction (OPC) together with conventional illumination is commonly used for contact layers, because it is simple to handle and processing times are short. However, as geometries are getting smaller it becomes more difficult to accurately control critical dimension (CD) variations influenced by nearby pattern. This applies in particular for irregularly arranged contact holes. Here simulation based OPC is more effective. We present a procedure for application of simulation based OPC for a 193 nm lithography contact hole layer with rectangular contact holes of different sizes in different proximities, using attenuated phase shift masks. In order to further improve the accuracy of the simulation based OPC process, characteristics of the mask, like mask corner rounding are incorporated in the OPC process. We build an OPC model, use it for OPC processing of DRAM design data and investigate the process window of the printing contacts. The results show an overlapping process window for length and width of isolated and dense small contact holes of different length and width, which is sufficient for volume production.

Citation Download Citation

Martin Keck, Christof Bodendorf, Jorg Thiele, Alberto Lopez Gomez, Ying-Chung Tseng, and Teng-Yen Huang "Simulation based OPC for contact pattern using 193 nm lithography", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617215

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available