28 June 2005 Simulation based OPC for contact pattern using 193 nm lithography
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617215
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
For state of the art technologies, rule based optical proximity correction (OPC) together with conventional illumination is commonly used for contact layers, because it is simple to handle and processing times are short. However, as geometries are getting smaller it becomes more difficult to accurately control critical dimension (CD) variations influenced by nearby pattern. This applies in particular for irregularly arranged contact holes. Here simulation based OPC is more effective. We present a procedure for application of simulation based OPC for a 193 nm lithography contact hole layer with rectangular contact holes of different sizes in different proximities, using attenuated phase shift masks. In order to further improve the accuracy of the simulation based OPC process, characteristics of the mask, like mask corner rounding are incorporated in the OPC process. We build an OPC model, use it for OPC processing of DRAM design data and investigate the process window of the printing contacts. The results show an overlapping process window for length and width of isolated and dense small contact holes of different length and width, which is sufficient for volume production.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Keck, Martin Keck, Christof Bodendorf, Christof Bodendorf, Jorg Thiele, Jorg Thiele, Alberto Lopez Gomez, Alberto Lopez Gomez, Ying-Chung Tseng, Ying-Chung Tseng, Teng-Yen Huang, Teng-Yen Huang, } "Simulation based OPC for contact pattern using 193 nm lithography", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.617215; https://doi.org/10.1117/12.617215
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