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28 June 2005 Status of EUVL mask development in Europe (Invited Paper)
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.617470
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
EUV lithography is the prime candidate for the next generation lithography technology after 193 nm immersion lithography. The commercial onset for this technology is expected for the 45 nm half-pitch technology or below. Several European and national projects and quite a large number of companies and research institutions in Europe work on various aspects of the technological challenges to make EUV a commercially viable technology in the not so far future. Here the development of EUV sources, the development of an EUV exposure tools, metrology tools dedicated for characterization of mask, the production of EUV mask blanks and the mask structuring itself are the key areas in which major activities can be found. In this talk we will primarily focus on those activities, which are related to establish an EUV mask supply chain with all its ingredients from substrate production, polishing, deposition of EUV layers, blank characterization, mask patterning process and the consecutive metrology and defect inspection as well as shipping and handling from blank supply to usage in the wafer fab. The EUV mask related projects on the national level are primarily supported by the French Ministry of Economics and Finance (MinEFi) and the German Ministry of Education and Research (BMBF).
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Hendrik Peters "Status of EUVL mask development in Europe (Invited Paper)", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); https://doi.org/10.1117/12.617470
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