28 June 2005 Wafer topography-aware optical proximity correction for better DOF margin and CD control
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Proceedings Volume 5853, Photomask and Next-Generation Lithography Mask Technology XII; (2005) https://doi.org/10.1117/12.620379
Event: Photomask and Next Generation Lithography Mask Technology XII, 2005, Yokohama, Japan
Abstract
Depth of focus is the major contributor to lithographic process margin. One of the major causes of focus variation is imperfect planarization of fabrication layers. Presently, OPC (Optical Proximity Correction) methods are oblivious to the predictable nature of focus variation arising from wafer topography. As a result, designers suffer from manufacturing yield loss, as well as loss of design quality through unnecessary guardbanding. In this work, we propose a novel flow and method to drive OPC with a topography map of the layout that is generated by CMP simulation. The wafer topography variations result in local defocus, which we explicitly model in our OPC insertion and verification flows. Our experimental validation uses 90nm foundry libraries and industry-strength OPC and scattering bar recipes. We find that the proposed topography-aware OPC can yield up to 90% reduction in edge placement errors at the cost of little increase in mask cost.
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Puneet Gupta, Puneet Gupta, Andrew B. Kahng, Andrew B. Kahng, Chul-Hong Park, Chul-Hong Park, Kambiz Samadi, Kambiz Samadi, Xu Xu, Xu Xu, } "Wafer topography-aware optical proximity correction for better DOF margin and CD control", Proc. SPIE 5853, Photomask and Next-Generation Lithography Mask Technology XII, (28 June 2005); doi: 10.1117/12.620379; https://doi.org/10.1117/12.620379
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