Growth of InAsPSb/InAs Heterostructures

J. L. Benchimol; B. Manot; M. Ketata; J. Primot

doi:10.1117/12.951201

9 July 1986 Growth of InAsPSb/InAs Heterostructures

J. L. Benchimol, B. Manot, M. Ketata, J. Primot

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951201
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

In(As1-x-yPxSby) is one of the most attractive III-V compound for optical sources with wavelength in the range 2-4µm. Liquid phase epitaxy of this quaternary alloy lattice-matched to InAs substrates was studied. Growth of a high band gap confinement layer, limited by the presence of an immiscibility domain, was optimized from phase diagram calculations. In(AsPSb)/InAs/In(AsPSb) heterostructures, which give the best confinement of the active layer and the longer emission wavelength of this system, were successfully grown.

Citation Download Citation

J. L. Benchimol, B. Manot, M. Ketata, and J. Primot "Growth of InAsPSb/InAs Heterostructures", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951201

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