InP based heterojunction photodiodes for high bit rate communications in the 1µm - 1.6µm wavelength range

J. Benoit; M. Boulou; R. Vergnaud

doi:10.1117/12.951212

9 July 1986 InP based heterojunction photodiodes for high bit rate communications in the 1µm - 1.6µm wavelength range

J. Benoit, M. Boulou, R. Vergnaud

Proceedings Volume 0587, Fiber Optic Sources and Detectors; (1986) https://doi.org/10.1117/12.951212
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

This paper reviews the general requirements for the design and technology of InP/In1-xGaxAsyP1-y PIN and avalanche detectors suitable for high speed and low level detection in the 1µm - 1.6µm wavelength region. Results on different type of InP based photodiodes are presented.

Citation Download Citation

J. Benoit, M. Boulou, and R. Vergnaud "InP based heterojunction photodiodes for high bit rate communications in the 1µm - 1.6µm wavelength range", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); https://doi.org/10.1117/12.951212

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