Avalanche photodiodes (APD) based on bulk grown Cd0.7Hg0.3Te ( λ = 1.55 µm) offer significant advantages over the diodes fabricated from group III-V and group IV semiconductors. Metal Organic Chemical Vapour Deposition (MOCVD) is a well established technique for the growth of CMT (CdxHgl-xTe) (0<x<1). The interdiffused multilayer process (IMP) has been implemented on a computer controlled MOCVD system to improve the compositional uniformity of epitaxial films grown by this technique. Currently, this technique is giving compositional uniformity of ≈3% over 1 cm2 on CdTe substrates.
G. T. Jenkin,
M. J. Hyliands,
K. T. Woodhouse,
"MOCVD of CMT", Proc. SPIE 0587, Fiber Optic Sources and Detectors, (9 July 1986); doi: 10.1117/12.951204; https://doi.org/10.1117/12.951204