31 August 2005 In-line characterization of silicon nano-crystals grown on high-K tunnel dielectrics
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Abstract
The development of silicon nano-crystals (nc-Si or dots) technologies requires important characterization work, and till now suffers from the lack of non-invasive, in-line metrology to control the growth of dots. This paper reports the validation of a new in-line dots size and density characterization, achieved by coupling light scattering analysis and XRay reflectivity measurements. A set of nc-Si with density ranging from 1011 to 6x1011cm-2 and size from 9 to 13nm was grown on Al2O3 / HfO2 stacks and used to validate the correlation between light scattering and dot density, and the correlation between X-Ray reflectivity and dot size. This fast (<10 minutes per wafer) in-line protocol gives very encouraging results, being in good agreement with Scanning Electron Microscopy off-line measurements.
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E. Nolot, E. Nolot, P. Mur, P. Mur, S. Favier, S. Favier, "In-line characterization of silicon nano-crystals grown on high-K tunnel dielectrics", Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 587805 (31 August 2005); doi: 10.1117/12.616820; https://doi.org/10.1117/12.616820
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