31 August 2005 Scatter analysis of optical components from 193 nm to 13.5 nm
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Light scattering techniques allow a comprehensive characterization of surfaces and thin film coatings. Driven by the increasing demands on optical components for DUV lithography at 193 nm, a system for ARS and TS measurements at 193 nm and 157 nm has been developed at the Fraunhofer Institute in Jena. The set-up and measurement examples are presented ranging from ARS of low-scattering substrates and dielectric multilayers to the roughness analysis of EUV mirrors. To follow the recent developments of semiconductor industry towards EUV lithography at 13.5 nm, a new EUV scattering measurement system is developed. The current status is reported.
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Sven Schroeder, Sven Schroeder, Mathias Kamprath, Mathias Kamprath, Stefan Gliech, Stefan Gliech, Angela Duparre, Angela Duparre, } "Scatter analysis of optical components from 193 nm to 13.5 nm", Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58780T (31 August 2005); doi: 10.1117/12.616423; https://doi.org/10.1117/12.616423

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