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31 August 2005 Radiation thermometry for silicon wafers
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Abstract
Emissivity and transmissivity of a silicon wafer were studied during the growth of thin oxide films from the viewpoint of spectral, directional and polarized characteristics of thermal radiation. Experimental results were mostly coincident with simulated results. By using a simulation model to estimate the optical properties of silicon wafers, a direct relationship was found between the ratio of p- to s-polarized radiance and the polarized emissivity under specific conditions. This relationship was experimentally confirmed at high temperatures (> 900 K). On the basis of these results, the present study proposes a new radiation thermometry technique that can measure the temperature and spectral emissivity of a silicon wafer at a wavelength of 0.9 μm and at moderately high temperatures, irrespective of the variation in emissivity with oxide film thickness.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Iuchi, Y. Ikeda, and K. Hiraka "Radiation thermometry for silicon wafers", Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 587819 (31 August 2005); https://doi.org/10.1117/12.613857
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