31 August 2005 Effect of exposure intensity on the photochemical reaction speed of the lithography for thick film resists
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Abstract
Thick resist lithography is a rather complicated process, which involves quite a few nonlinear factors, so surface profile is largely affected by process conditions such as baking, exposure and development parameters. In this paper, the photochemical reaction mechanism of the thick diazonaphthoquinone(DNQ)-Novolak based photoresists is discussed in detail, and then the effect of exposure intensity on the photochemical reaction speed is investigated by using kinetic model. Numerical simulation and experimental results are presented and agree well with each other. Through comparison between the simulated and experimental results for thick DNQ-Novolak based resists, the photochemical reaction speed is obviously affected by the intensity magnitude during exposure, which will lead to the failure of exposure reciprocity law. This phenomenon is caused by the increase in temperature of resists, due to the highly exothermic reaction during exposure. These results are useful for the lithographic process optimization of thick film resists.
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Yongkang Guo, Xionggui Tang, Jianhua Zhu, Jinglei Du, "Effect of exposure intensity on the photochemical reaction speed of the lithography for thick film resists", Proc. SPIE 5878, Advanced Characterization Techniques for Optics, Semiconductors, and Nanotechnologies II, 58781G (31 August 2005); doi: 10.1117/12.619210; https://doi.org/10.1117/12.619210
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