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7 July 1986 Photoresponse of 3-5 µm p-channel MISFETs
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Proceedings Volume 0588, Recent Developments in Materials & Detectors for the Infrared; (1986) https://doi.org/10.1117/12.951768
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
Abstract
Photogenerated current at 77K, when the transparent gate of an Hgl-xCdxTe(x=0.29) and InSb p-channel MISFETs is illuminated with infrared radiation, have been evaluated theoretically as a function of gate voltage. To process of excitation are considered, namely, an electron-hole pair generation across the bandgap in the depletion layer of the field induced junction and an electron excitation through interface states at the semi-conductor-SiO2 interface. The photocurrent is primarily due to the later process. For sake of comparison, the drain-source current without illumination has also been calculated as function of gate voltage.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. C. Gupta and B. L. Sharma "Photoresponse of 3-5 µm p-channel MISFETs", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951768
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