Photoresponse of 3-5 µm p-channel MISFETs

S. C. Gupta; B. L. Sharma

doi:10.1117/12.951768

7 July 1986 Photoresponse of 3-5 µm p-channel MISFETs

S. C. Gupta, B. L. Sharma

Author Affiliations +

Proceedings Volume 0588, Recent Developments in Materials & Detectors for the Infrared; (1986) https://doi.org/10.1117/12.951768
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France

Abstract

Photogenerated current at 77K, when the transparent gate of an Hgl-xCdxTe(x=0.29) and InSb p-channel MISFETs is illuminated with infrared radiation, have been evaluated theoretically as a function of gate voltage. To process of excitation are considered, namely, an electron-hole pair generation across the bandgap in the depletion layer of the field induced junction and an electron excitation through interface states at the semi-conductor-SiO2 interface. The photocurrent is primarily due to the later process. For sake of comparison, the drain-source current without illumination has also been calculated as function of gate voltage.

Citation Download Citation

S. C. Gupta and B. L. Sharma "Photoresponse of 3-5 µm p-channel MISFETs", Proc. SPIE 0588, Recent Developments in Materials & Detectors for the Infrared, (7 July 1986); https://doi.org/10.1117/12.951768

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE