7 September 2005 Numerical simulation of GaAs MESFET photodetector for OEIC receivers
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Abstract
A two-dimensional numerical model of GaAs MESFET with non uniform doping is developed and various characteristics are estimated under different illumination conditions. The Poisson's equations in the gate depletion region and the space charge region of the channel substrate junctions are solved numerically under dark and illumination condition. The photo induced voltages at the schottky contact (Vop) as well as at the junction between channel and substrate (Vops) are calculated for estimating the channel voltage profile and the drain current characteristics. It has been seen that the depletion widths are strongly influenced by illumination and hence the characteristics. The model developed here can be used to obtain the drain and the transfer characteristics cunder dark and illuminated conditions. The device parameters such as transconductance and gate to source capacitance are numerically estimated to examine the switching characteristics of the device. The photo current has also been estimated and the responsivity of the device has been calculated. The responsivity is found to be very high. The switching speed has also increased under illumination because of the decrease in the RC time constant. It has been concluded that the two dimensional modeling provides better accurate solution and closely fit with the experimental results. The model can be used as basic tool for accurate simulation of MESFET photodetector for OEIC applications.
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Madheswaran Muthusamy, Kalaiarasi Kuppusamy, "Numerical simulation of GaAs MESFET photodetector for OEIC receivers", Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 588104 (7 September 2005); doi: 10.1117/12.616800; https://doi.org/10.1117/12.616800
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