9 September 2005 Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics
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Abstract
A novel H-Space electrode is introduced as an alternative design to the interdigitated electrode of a p-i-n photodetector. H-Space electrode is considered to be capable of increasing both the quantum efficiencies and the responsitivity of the photodectors by means of a bridge structure. In order to analyze the effect of the design, the design was systematically simplified into a single cell by utilizing Matlab. Methods to identify the minuscule effects of a very short light pulse in the lateral PIN photodetector structure were carried out in microscopic proportion and this technique displays the incident light's erratic nature upon entering the photodetector. The Matlab software was used to collect drift current data based on individual drift changes of electrons arriving at the electrodes at a relation time period. An ideal range of 10μm was chosen as the size of the intrinsic region and a set of randomly generated incident photon with Gaussian characteristics were bombarded into the single cell structure. By limiting a low number of incoming photons per unit time with coherent waterfronts, at random locations between p and n electrodes, a set of very precise electron characteristic were obtained for a beam with a Gaussian spread of 5 micron . Data for generated current were analyzed based on individual drift changes of electrons with bulk mobilities arriving at the electrodes in a very short time period. We relate the data obtained from the H space electrode with those obtained from an interdigitated electrode.
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Esther Loo Chee Hong, Sahbudin Shaari, Burhanuddin Yeop Majlis, "Novel modification of an interdigitated lateral PIN photodetector electrode design based on photon absorption characteristics", Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 58810Q (9 September 2005); doi: 10.1117/12.614723; https://doi.org/10.1117/12.614723
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