Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling

Yegao Xiao; Ishwara Bhat; M. Nurul Abedin

doi:10.1117/12.615057

12 September 2005 Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling

Yegao Xiao, Ishwara Bhat, M. Nurul Abedin

Author Affiliations +

Proceedings Volume 5881, Infrared and Photoelectronic Imagers and Detector Devices; 58810R (2005) https://doi.org/10.1117/12.615057
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

InP/InGaAs avalanche photodiodes (APDs) are being widely utilized in optical receivers for modern long haul and high bit-rate optical fiber communication systems. The separate absorption, grading, charge, and multiplication (SAGCM) structure is an important design consideration for APDs with high performance characteristics. Time domain modeling techniques have been previously developed to provide better understanding and optimize design issues by saving time and cost for the APD research and development. In this work, performance dependences on multiplication layer thickness have been investigated by time domain modeling. These performance characteristics include breakdown field and breakdown voltage, multiplication gain, excess noise factor, frequency response and bandwidth etc. The simulations are performed versus various multiplication layer thicknesses with certain fixed values for the areal charge sheet density whereas the values for the other structure and material parameters are kept unchanged. The frequency response is obtained from the impulse response by fast Fourier transformation. The modeling results are presented and discussed, and design considerations, especially for high speed operation at 10 Gbit/s, are further analyzed.

Citation Download Citation

Yegao Xiao, Ishwara Bhat, and M. Nurul Abedin "Performance dependences on multiplication layer thickness for InP/InGaAs avalanche photodiodes based on time domain modeling", Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 58810R (12 September 2005); https://doi.org/10.1117/12.615057

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