12 September 2005 Electrical characteristics relaxation of ion milled MCT layers
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Abstract
Properties of n+-n-p+ structures formed in Hg1-xCdxTe single crystals and epitaxial films by ion milling (IM) followed by isothermal and isochronous annealing were investigated. It was demonstrated that the intricateed electrical properties relaxation of these structures and kinetics relations depend on the samples composition and the technology of their preparation. It was demonstrated that the ion milling of Hg1xCdxTe layers results in forming a complex n+-layer which contains several sub-layers with different electron conductivities. The analysis of the processes of electron relaxation in theses sub-layers under isothermal aging (at room temperature) and (or) isochronous annealing, has allowed the interpretation of the nature of conductivities in them. The analysis of times and activation energies of relaxation process confirms the relaxation of electrical characteristics of these structures is caused by decomposition of donor centers formed by Hg interstitial atoms with I and V impurities. Carried out analysis of the electrical characteristics of MCT layers subjected to IM has shown, that in spite of its simplicity for p-n-junctions manufacturing, the grounded technology of IM application for forming stable p-n-junctions requires further study of its optimization.
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I. I. Izhnin, V. V. Bogoboyashchyy, F. F. Sizov, "Electrical characteristics relaxation of ion milled MCT layers", Proc. SPIE 5881, Infrared and Photoelectronic Imagers and Detector Devices, 58810U (12 September 2005); doi: 10.1117/12.617389; https://doi.org/10.1117/12.617389
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