New operation mode of low background extrinsic double-injection IR detectors

Nicolay B. Zaletaev; Anatoly M. Filachev; Vladimir P. Ponomarenko

doi:10.1117/12.615673

29 August 2005 New operation mode of low background extrinsic double-injection IR detectors

Nicolay B. Zaletaev, Anatoly M. Filachev, Vladimir P. Ponomarenko

Proceedings Volume 5883, Infrared Spaceborne Remote Sensing 2005; 58830U (2005) https://doi.org/10.1117/12.615673
Event: Optics and Photonics 2005, 2005, San Diego, California, United States

Abstract

Double injection into extrinsic semiconductor infrared detectors can lead, in some cases, to considerable increase of their current responsivity without essential change of detectivity. These detectors are called extrinsic double-injection photodiodes. They are especially effective under low background conditions. The BLIP-detection responsivity of studied Ge:Hg double injection photodiodes has reached about 2000 A/W at a wavelength of 10 micrometers under a background of 6 x 10¹¹cm^-2s^-1. This is more than 100 times the responsivity of the same material and same size photoconductive detector used under the same conditions. Under periodically pulsing bias, when a sufficiently high steady-state voltage is applied to such a diode on which relatively short voltage pulses of rectangular shape are imposed, the realization of charge accumulation in the detector bulk proves to be possible for the period of voltage variation and readout with amplification during the voltage pulse. A model of this effect was developed. It was shown, in particular, that the pulse readout current of the diode under some conditions was equal to its steady-state current multiplied by the ratio of the integration time to the readout time, i.e., great amplification takes place during the readout: the reading-out charge equals the charge generated in diode bulk for the pulse voltage variation period multiplied by the steady-state photocurrent gain of the diode. The pulse responsivity for Ge:Hg diodes has reached about 10⁵ A/W. It was determined as the ratio of the pulse readout current to the power of steady-state incident radiation flux. This operation mode is especially convenient for detector arrays.

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Nicolay B. Zaletaev, Anatoly M. Filachev, and Vladimir P. Ponomarenko "New operation mode of low background extrinsic double-injection IR detectors", Proc. SPIE 5883, Infrared Spaceborne Remote Sensing 2005, 58830U (29 August 2005); https://doi.org/10.1117/12.615673

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KEYWORDS

Diodes

Sensors

Photoresistors

Photodiodes

Electrons

Semiconductors

Infrared detectors

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