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10 September 2005 Advances in semiconductor laser bars and arrays
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Abstract
Advances in high power semiconductor lasers such as increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime have the potential to dramatically improve diode pumped systems and enable new direct diode applications. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power arrays at eye-safe wavelengths are presented.
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R. M. Lammert, S. W. Oh, M. L. Osowski, C. Panja, D. Qian, P. T. Rudy, T. Stakelon, and J. E. Ungar "Advances in semiconductor laser bars and arrays", Proc. SPIE 5887, Lidar Remote Sensing for Environmental Monitoring VI, 58870B (10 September 2005); https://doi.org/10.1117/12.620400
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