18 August 2005 Projecting EOL dark current distribution of proton irradiated CCDs
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Proceedings Volume 5897, Photonics for Space Environments X; 58970K (2005); doi: 10.1117/12.619233
Event: Optics and Photonics 2005, 2005, San Diego, California, United States
Abstract
Space instrument programs occasionally need an estimate of how dark current distribution of a silicon CCD changes versus proton radiation exposure and temperature. The task that is the subject of this article was started by adopting a relevant gamma distribution model produced by M.S. Robbins [1] and estimating its parameters, α and β, by using data acquired by Demara [2]. The fortuitous result was that α was found to depend solely on damage displacement dose and β was found to be practically equal to the native bulk dark current of silicon. These implications were tested with information from three published articles. In comparison with the published results, the model was found to be accurate within a factor of two.
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James S. Flores, "Projecting EOL dark current distribution of proton irradiated CCDs", Proc. SPIE 5897, Photonics for Space Environments X, 58970K (18 August 2005); doi: 10.1117/12.619233; https://doi.org/10.1117/12.619233
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KEYWORDS
Data modeling

Charge-coupled devices

Silicon

Aerospace engineering

Medium wave

Annealing

Data acquisition

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