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1 May 1986 High Resolution Linear Arrays
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Proceedings Volume 0591, Solid-State Imagers and Their Applications; (1986)
Event: 1985 International Technical Symposium/Europe, 1985, Cannes, France
This paper describes the methodology, which is used in IMEC for the realization of very high resolution linear image sensors. The key elements in design and processing are the use of the DEPLI- sensor principle, a quadrilinear read-out approach and the use of p-p+ epi-material. The feasibility of these principles are demonstrated on devices with a pitch of 8,6,5 and 4 μm and with a number of pixels ranging from 800 to 4096. A standard triple poly, buried channel process is used for the fabrication of the devices. A charge transfer inefficiency of better than 1.E-5 is measured and a data rate of over 5 MHz can be achieved. The dark current is less than 2 nA/cm2, the responsivity equals 0.36 A/W at 700 nm wavelength and the non-uniformity is less than ± 5 % for all sensor types.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Bosiers, Jan Vermeiren, and Jan Sevenhans "High Resolution Linear Arrays", Proc. SPIE 0591, Solid-State Imagers and Their Applications, (1 May 1986);


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