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20 September 2005 Advanced computational modeling for growing III-V materials in a high-pressure chemical vapor-deposition reactor
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Abstract
A numerical model was developed to simulate vapor deposition in high-pressure chemical vapor-deposition reactors, under different conditions of pressure, temperature, and flow rates. The model solved for steady-state gas-phase and heterogeneous chemical kinetic equations coupled with fluid dynamic equations within a three-dimensional grid simulating the actual reactor. The study was applied to indium nitride (InN) epitaxial growth. The steady-state model showed that at 1050-1290 K average substrate temperatures and 10 atm of total pressure, atomic indium (In) and monomethylindium [In(CH3)] were the main group III gaseous species, and undissociated ammonia (NH3) and amidogen (NH2) the main group V gaseous species. The results from numerical models with an inlet mixture of 0.73:0.04:0.23 mass fraction ratios for nitrogen gas (N2), NH3 and trimethylindium [In(CH3)3], respectively, and an initial flow rate of 0.17 m s-1, were compared with experimental values. Using a simple four-path surface reaction scheme, the numerical models yielded a growth rate of InN film of 0.027 μm per hour when the average substrate temperature was 1050 K and 0.094 μm per hour when the average substrate temperature was 1290 K. The experimental growth rate under similar flow ratios and reactor pressure, with a reactor temperature between 800 and 1150 K yielded an average growth rate of 0.081 μm per hour, comparing very well with the computed values.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Beatriz H. Cardelino, Craig E. Moore, Carlos A. Cardelino, and Nikolaus Dietz "Advanced computational modeling for growing III-V materials in a high-pressure chemical vapor-deposition reactor", Proc. SPIE 5912, Operational Characteristics and Crystal Growth of Nonlinear Optical Materials II, 59120F (20 September 2005); https://doi.org/10.1117/12.616528
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