31 August 2005 EUV characteristics of a high power and high repetition rate CO2 laser driven Xe plasma
Author Affiliations +
A CO2 laser driven Xe jet plasma is presented as light source system for EUV lithography. A short-pulse TEA C02 master oscillator power amplifier system and a pre-pulse Nd:YAG laser were used for plasma generation. The dependence of EUV plasma parameters, e.g. conversion efficiency, plasma image and in-band and out-of-band spectra, on the delay time between the pre-pulse and the main pulse laser was investigated. A maximum conversion efficiency of 0.6 % was obtained at a delay time of about 200 ns. In addition, characteristics of fast ions were measured by the time-of-flight method. The peak energy of the fast ion energy distribution decreased significantly at delay times larger than 200 ns. This result is very promising with respect to collector mirror lifetime extension by magnetic field mitigation.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Komori, Yoshifumi Ueno, Hideo Hoshino, Tatsuya Ariga, and Akira Endo "EUV characteristics of a high power and high repetition rate CO2 laser driven Xe plasma", Proc. SPIE 5918, Laser-Generated, Synchrotron, and Other Laboratory X-Ray and EUV Sources, Optics, and Applications II, 59180H (31 August 2005); doi: 10.1117/12.616051; https://doi.org/10.1117/12.616051


LPP-EUV light source for HVM lithography
Proceedings of SPIE (January 12 2017)
Shorter wavelength EUV source around 6.X nm by rare earth...
Proceedings of SPIE (September 28 2011)
Magnetic field ion mitigation for EUV light sources
Proceedings of SPIE (May 05 2005)
High-power laser plasma EUV light source for lithography
Proceedings of SPIE (September 19 2004)
EUV light source development in Japan
Proceedings of SPIE (November 17 2003)

Back to Top