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31 August 2005 Development of short pulse and high power CO2 laser for EUV lithography
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Abstract
Laser produced plasma EUV source is the candidate for high quality, 115 W EUV light source for the next generation lithography. Cost effective laser driver is the key requirement for the realization of the concept as a viable scheme. A CO2 laser driven LPP system with a Xenon droplet target is therefore a promising light source alternative for EUV. We are developing a high power and high repetition rate CO2 laser system to achieve 10 W intermediate focus EUV power. High conversion efficiency (CE) from the laser energy to EUV in-band energy is the primarily important issue for the concept to be realized. Numerical simulation analysis of a Xenon plasma target shows that a short laser pulse less than 15 ns is necessary to obtain a high CE by a CO2 laser. This paper describes on the development of a CO2 laser system with a short pulse length less than 15 ns, an average power of a few kW, and a repetition rate of 100 kHz based on RF-excited, axial flow CO2 laser modules. Various issues are reported on the laser system design, namely l00W seeder, parasitic oscillation suppression, small signal gain and saturation fluence, and beam quality. Additional approach to increase the amplification efficiency is discussed. Acknowledgement: This work was supported by NEDO.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akira Endo, Hideo Hoshino, Tatsuya Ariga, and Taisuke Miura "Development of short pulse and high power CO2 laser for EUV lithography", Proc. SPIE 5918, Laser-Generated, Synchrotron, and Other Laboratory X-Ray and EUV Sources, Optics, and Applications II, 59180I (31 August 2005); https://doi.org/10.1117/12.616342
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