31 August 2005 The effects of precipitates on CdZnTe device performance
Author Affiliations +
Abstract
A high-intensity X-ray beam collimated down to a 10-micrometer spot size, available at Brookhaven's National Synchrotron Light Source (NSLS), was employed to perform X-ray mapping to measure the correlation between microscopic defects (precipitates) and variations in the collected charges in long-drift CdZnTe (CZT) detectors. First, we use X-ray diffraction topography (XDT) measurements at the high-energy beamline and IR microscopy to identify the defects distribution and strains in the bulk of CZT crystals. Then, we perform X-ray raster scans of the CZT detectors to measure their responses with 10-micrometer spatial resolution. The brightness of the source allows for good statistics in very short times. Precipitates that were singled out with X-ray scans are locally investigated by applying pulse-shape analysis. The presentation discusses how precipitates affect the device performance.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. S. Camarda, A. E. Bolotnikov, G. A. Carini, L. Li, G. W. Wright, R. B. James, "The effects of precipitates on CdZnTe device performance", Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 592204 (31 August 2005); doi: 10.1117/12.619812; https://doi.org/10.1117/12.619812
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Study of growth defects in CZT and their influence on...
Proceedings of SPIE (October 21 2004)
Extended defects in As-grown CdZnTe
Proceedings of SPIE (August 27 2010)
Development of CdZnTe radiation detectors
Proceedings of SPIE (September 08 2011)

Back to Top