31 August 2005 Performance studies of CdZnTe detector by using a pulse shape analysis
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Abstract
Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices.
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A. E. Bolotnikov, A. E. Bolotnikov, G. S. Camarda, G. S. Camarda, G. A. Carini, G. A. Carini, M. Fiederle, M. Fiederle, L. Li, L. Li, G. W. Wright, G. W. Wright, R. B. James, R. B. James, } "Performance studies of CdZnTe detector by using a pulse shape analysis", Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220K (31 August 2005); doi: 10.1117/12.618355; https://doi.org/10.1117/12.618355
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