31 August 2005 Performance studies of CdZnTe detector by using a pulse shape analysis
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Pulse shape analysis is proved to be a powerful tool to characterize the performance of CdZnTe devices and understand their operating principles. It allows one to investigate the device configurations, electron transport properties, effects governing charge collection, electric-field distributions, signal charge formation, etc. This work describes an application of different techniques based on the pulse shape measurements to characterize pixel, coplanar-grid, and virtual Frisch-grid devices and understand the electronic properties of CZT material provided by different vendors. We report new results that may explain the performance limits of these devices.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Bolotnikov, A. E. Bolotnikov, G. S. Camarda, G. S. Camarda, G. A. Carini, G. A. Carini, M. Fiederle, M. Fiederle, L. Li, L. Li, G. W. Wright, G. W. Wright, R. B. James, R. B. James, } "Performance studies of CdZnTe detector by using a pulse shape analysis", Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220K (31 August 2005); doi: 10.1117/12.618355; https://doi.org/10.1117/12.618355


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