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16 September 2005 Measurement of charge carrier properties in mercuric iodide
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Abstract
The transport properties of electrons and holes in mercuric iodide determine the performance of detectors. The relatively low levels of these properties limit the volume of detectors with high spectral resolution that can be fabricated and leads to long pulse collection times. These transport parameters can be increased by optimizing the material processing, the crystal growth, and the detector fabrication. This paper will present our own results obtained by analysis of individual pulse shapes. The values for the mobilities generally measured are between 60-90 cm2/Vsec for electrons and 2-4 cm2/Vsec for holes. These results will be compared with the values published by other investigators. Possible reasons for the differences in the reported values will be discussed and explanations will be suggested.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lodewijk van den Berg, William B. Alexander, Kenneth R. Pohl, and John S. Sandoval "Measurement of charge carrier properties in mercuric iodide", Proc. SPIE 5922, Hard X-Ray and Gamma-Ray Detector Physics VII, 59220P (16 September 2005); https://doi.org/10.1117/12.622363
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