The hydrogenated Silicon nitride film is well developed to form a passivation layer for non-volatile memory devices. It has many superior chemical, electrical, and mechanical properties. In addition, it also has excellent optical properties. It is transparent in UV and DUV range, with a high refractive index of about 1.7~2. Owing to its superior mechanical and optical properties, we used a hydrogenated silicon nitride (SiNXHY) membrane as an optical phase element. By using e-beam lithography, we demonstrate on feasibility for the fabrication of subwavelength optical elements, such as waveplate, polarizer, and polarized beam splitter on a silicon-based low stress SiNXHY membrane for the UV region applications. An SiNXHY film was deposited by plasma enhanced chemical vapor deposition (PECVD) and the free- standing membrane is formed by KOH silicon backside etching, from which substrate materials are removed. The membrane's morphology and geometries of subwavelength optical elements were verified by means of an scanning electron microscope (SEM), and the optical performance characteristics of these subwavelength optical elements are shown. The experimental datas agree well with theoretical predictions.